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Preliminary Technical Information
TrenchGate Power
MOSFET HiperFET TM
IXFN360N10T
V DSS
I D25
R DS(on)
=
=
≤
100V
360A
2.6m Ω
N-Channel Enhancement Mode
Avalanche Rated
Fast Intrinsic Rectifier
miniBLOC, SOT-227
E153432
Symbol
V DSS
V DGR
Test Conditions
T J = 25 ° C to 175 ° C
T J = 25 ° C to 175 ° C, R GS = 1M Ω
Maximum Ratings
100
100
V
V
G
S
V GSS
V GSM
I D25
Continuous
Transient
T C = 25 ° C (Chip Capability)
± 20
± 30
360
V
V
A
D
S
I LRMS
I DM
Lead Current Limit, RMS
T C = 25 ° C, Pulse Width Limited by T JM
200
900
A
A
G = Gate
S = Source
D = Drain
I A
E AS
P D
T J
T JM
T stg
T L
T SOLD
V ISOL
M d
Weight
T C = 25 ° C
T C = 25 ° C
T C = 25 ° C
1.6mm (0.062 in.) from Case for 10s
Plastic Body for 10s
50/60 Hz, RMS t = 1 Minute
I ISOL ≤ 1mA t = 1 Second
Mounting Torque
Terminal Connection Torque
100
2
830
-55 ... +175
175
-55 ... +175
300
260
2500
3000
1.5/13
1.3/11.5
30
A
J
W
° C
° C
° C
° C
° C
V~
V~
Nm/lb.in.
Nm/lb.in.
g
Either Source Terminal S can be used as
the Source Terminal or the Kelvin Source
( Gate Return ) Terminal.
Features
International Standard Package
175°C Operating Temperature
High Current Handling Capability
Avalanche Rated
Fast Intrinsic Rectifier
Low R DS(on)
Advantages
Easy to Mount
Space Savings
High Power Density
Symbol Test Conditions
(T J = 25 ° C, Unless Otherwise Specified)
Characteristic Values
Min. Typ. Max.
Applications
BV DSS
V GS = 0V, I D = 1mA
100
V
DC-DC Converters
V GS(th)
I GSS
V DS = V GS , I D = 250 μ A
V GS = ± 20V, V DS = 0V
2.5
4.5
± 200
V
nA
Battery Chargers
Switched-Mode and Resonant-Mode
Power Supplies
I DSS
R DS(on)
V DS = V DSS
V GS = 0V T J = 150 ° C
V GS = 10V, I D = 0.5 ? I D25 , Note 1
50 μ A
5.0 mA
2.6 m Ω
DC Choppers
AC Motor Drives
Uninterruptible Power Supplies
High Speed Power Switching
Applications
? 2008 IXYS CORPORATION, All rights reserved
DS100088(12/08)
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